Title :
High Linearity Dynamic Feedback Darlington Amplifier
Author :
Kobayashi, Kevin W.
Author_Institution :
SIRENZA MICRODEVICES, Torrance
Abstract :
This paper reports on a novel InGaP HBT Darlington RF amplifier which employs dynamic feedback linearization in order to improve IP3 and P1dB compression. The dynamic feedback amplifier obtains 20 dB gain, a 0.05-4 GHz BW, a P1dB and IP3 of 21.2 dBm and 40 dBm, respectively at 2 GHz. Compared to a conventional Darlington feedback design using equivalent quiescent bias of 5V-30mA, the dynamic feedback Darlington achieved an improvement of 7.5 dB in P1dB and 11 dB in IP3. A record IP3/Pdc ratio linearity figure of merit (LFOM) of 55.4:1 and 26.9:1 were obtained at 850 MHz and 1.95 GHz. These results are believed to be the best IP3 LFOM results reported for a 5V wide band Darlington feedback amplifier.
Keywords :
III-V semiconductors; MMIC amplifiers; UHF integrated circuits; bipolar MMIC; feedback amplifiers; gallium compounds; heterojunction bipolar transistors; indium compounds; linearisation techniques; radiofrequency amplifiers; wideband amplifiers; HBT Darlington RF amplifier; IP3 compression; InGaP; P1dB compression; current 30 mA; dynamic feedback linearization; frequency 0.05 GHz to 4 GHz; gain 20 dB; high linearity dynamic feedback Darlington amplifier; linearity figure of merit; voltage 5 V; wideband amplifier; Feedback amplifiers; Gallium nitride; Heterojunction bipolar transistors; Linearity; Optical amplifiers; PHEMTs; Radio frequency; Radiofrequency amplifiers; Transceivers; Wideband;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-1022-4
DOI :
10.1109/CSICS07.2007.53
