Demonstration of a 3-D GaAs HEMT Phase Shifter MMIC Utilizing a Five Layer BCB Process with Seven Metal Layers

Author

Farkas, D.S. ; Uyeda, J. ; Wang, J. ; Luo, W.B. ; Elmadjian, R. ; Eaves, D. ; Luo, K. ; Lai, R. ; Barsky, M. ; Wojtowicz, M. ; Oki, A.

Author_Institution

Northrop Grumman Corp., Redondo Beach

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

3

Abstract

In this paper, we demonstrate a vertically integrated 3-D MMIC phase shifter at 8 GHz that utilizes a 5-layer benzocyclobutene (BCB) process providing a total of 7 metal layers. This multi-layer technology is fully compatible with Northrop Grumman´s 0.15 um GaAs HEMT technology and enables a high level of MMIC compaction which will substantially reduce the size and cost of MMICs. A key feature of this technology is the ability to isolate vertically integrated components of a MMIC´ with separate ground planes allowing circuit compaction while maintaining high isolation.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC phase shifters; gallium compounds; multilayers; GaAs; GaAs HEMT phase shifter MMIC; circuit compaction; five layer BCB process; frequency 8 GHz; multi-layer technology; size 0.15 mum; Compaction; Costs; Dielectric substrates; Gallium arsenide; HEMTs; Integrated circuit technology; Isolation technology; MMICs; Phase shifters; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.55

Filename

4384435