Title :
Bias dependent gain and speed mechanism in illuminated HBTs
Author :
De Barros, L. E M, Jr. ; Paolella, A. ; Herczfeld, P.R. ; Rothwarf, A. ; Rosen, A.
Author_Institution :
Center for Microwave-Lightwave Eng., ECE Department, Drexel University, Philadelphia PA, 19104. ph# (215)895-2914, fax#(215)895-4968, e-mail: junior@diamante.ece.drexel.edu
Abstract :
A physics-based quantitative analysis of the illuminated HBT, with empirical verification, is discussed. A novel optical mechanism, internal photoconductivity, with large gain and bandwidth is described. The responsivity of the device can be considerably improved, 20-fold in this case, with a constant external base current biasing configuration as opposed to the constant base-emitter voltage case. The transient response of the HBT is discussed regarding incident optical power and biasing.
Keywords :
Charge carrier processes; Heterojunction bipolar transistors; High speed optical techniques; Lighting; Microwave devices; Optical receivers; Photoconducting devices; Photoconductivity; Stimulated emission; Voltage;
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
DOI :
10.1109/EUMA.1996.337749
