DocumentCode :
2131472
Title :
Design and implementation of high resolution, high linearity temperature sensor in CMOS process
Author :
Felini, C. ; Merenda, M. ; Della Corte, F.G.
Author_Institution :
DIEES, Univ. Mediterranea of Reggio Calabria, Reggio Calabria, Italy
fYear :
2015
fDate :
3-5 Feb. 2015
Firstpage :
1
Lastpage :
4
Abstract :
An high-resolution CMOS temperature sensor with high linearity in the range from 20°C to 90°C is presented. The circuit uses substrate bipolars as temperature transducers. The temperature sensor consists of two building blocks: a Proportional To Absolute Temperature (PTAT) voltage generator and a differential amplifier. The second block is necessary to obtain reasonable voltage level that can be either read with a simple setup using it as analog input for an ADC. The simulation predictions are confirmed with experimental data resulting from the IC fabricated in a standard 0.35μm CMOS technology.
Keywords :
CMOS integrated circuits; analogue-digital conversion; bipolar integrated circuits; differential amplifiers; temperature sensors; transducers; ADC; IC fabrication; PTAT voltage generator; differential amplifier; high-resolution CMOS temperature sensor; proportional to absolute temperature voltage generator; size 0.35 mum; substrate bipolar; temperature 20 degC to 90 degC; temperature transducer; CMOS integrated circuits; Linearity; Sensitivity; Temperature distribution; Temperature sensors; Transistors; CMOS; PTAT; Sensor; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
AISEM Annual Conference, 2015 XVIII
Conference_Location :
Trento
Type :
conf
DOI :
10.1109/AISEM.2015.7066859
Filename :
7066859
Link To Document :
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