DocumentCode
2131908
Title
Thermal Coupling in Multi-finger Heterojunction Bipolar Devices
Author
Schubler, Martin ; Krozer, Viktor ; de la Fuente, Jesus Grajal ; Hartnagel, Hals L.
Author_Institution
TH Darmstadt, Institut fÿr Hochfrequenztechnik, Merckstr. 25, D-64283 Darmstadt, Germany, email: hfmweOO8@hrzpub.th-darmstadt.de
Volume
1
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
104
Lastpage
108
Abstract
IThe thermal characteristics of power HBT devices are considered. The analysis includes emitter finger coupling and limitation in power operation due to selfheating. An essential part of the generated heat is dissipated through the top device layers and metal contacts. A strongly uneven temperature distribution in the emitter finger of multi-finger devices is the result of not sufficient temperature drain through the emitter air-bridge. Sufficient thermal dissipation can be additionally obtained by temperature drain through the base and collector metallised areas on top of the device. An optimum distance between individual emitter fingers exists for maximum thermal coupling. This yields better thermal homogeneity.
Keywords
Analytical models; DH-HEMTs; Electromagnetic heating; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Temperature dependence; Temperature distribution; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337778
Filename
4138819
Link To Document