DocumentCode
2131970
Title
Drain Temperature Dependence on Ambient Temperature for a Cryogenic Low Noise C-Band Amplifier
Author
Muñoz, S. ; Gallego, J.D. ; Sebastián, J.L. ; Miranda, J.M.
Author_Institution
Dpt. Fisica Aplicada III, Facultad de Ciencias Fisicas. U. C. M., 28040 Madrid ( Spain).
Volume
1
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
114
Lastpage
118
Abstract
A comparison between predicted and measured noise temperatures for cryogenic HEMT amplifiers is presented by using the Pospieszalski´s noise model. A good agreement between predicted and measured amplifier´s noise performance is obtained both at room and cryogenic temperatures. However, the predicted values overestimate noise temperature in the center part of the measured temperature range (50K - 230K). A parabolic dependence for the drain temperature with ambient temperature is proposed to obtain a better fitting to the experimental results.
Keywords
Circuit noise; Cryogenics; Extraterrestrial measurements; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337780
Filename
4138821
Link To Document