Title :
Piezoelectric thin films for a high frequency ultrasound transducer with integrated electronics
Author :
Kim, H. ; Griggio, F. ; Kim, I.S. ; Choi, K. ; Tutwiler, R.L. ; Jackson, T.N. ; Trolier-McKinstry, S.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Lead zirconate titanate piezoelectric films were integrated into prototype one-dimensional array transducers. The geometry used for transducer arrays is a xylophone-bar type with a length:width aspect ratio greater than 5:1 in order to isolate the desired resonance modes. The PZT and remaining films in the stack were patterned using ion-beam etching and partially released from the underlying silicon substrate by XeF2 etching. Impedance measurements on the fabricated structures showed resonance frequencies between 3 and 70 MHz for fully and partially released structures depending on the transducer dimensions and vibration modes. In-water transmit and receive functionalities have been demonstrated. A bandwidth on receive of 66 % has been determined for partially released structures.
Keywords :
etching; integrated circuits; ion beam applications; lead compounds; piezoelectric thin films; ultrasonic transducer arrays; xenon compounds; PZT; Si; XeF2; frequency 3 MHz to 70 MHz; high frequency ultrasound transducer; impedance measurements; integrated electronics; ion-beam etching; lead zirconate titanate piezoelectric films; one-dimensional array transducers; piezoelectric thin films; resonance frequency; resonance modes; vibration modes; xylophone-bar type geometry;
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2010.5690594