DocumentCode :
2133001
Title :
Study of single electron transistor for metrological application
Author :
Iwasa, A. ; Fukushima, A. ; Sato, A. ; Sakamoto, Y. ; Endo, T.
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
fYear :
2000
fDate :
14-19 May 2000
Firstpage :
593
Lastpage :
594
Abstract :
SET transistor was fabricated in ETL for meteorological application. Gate modulation for a single electron transistor was observed. TLF-type noise was also observed which depend on cooling time.
Keywords :
semiconductor device noise; single electron transistors; TLF noise; cooling time; gate modulation; metrological applications; single electron transistor; Aluminum; Capacitance; Capacitors; Electrodes; Laboratories; Meteorology; Refrigeration; Scanning probe microscopy; Single electron transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-5744-2
Type :
conf
DOI :
10.1109/CPEM.2000.851149
Filename :
851149
Link To Document :
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