DocumentCode
2133107
Title
International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8)
fYear
1988
fDate
11-14 Dec. 1988
Abstract
Presents the front cover of the conference proceedings.
Keywords
digital integrated circuits; integrated circuit technology; microwave tubes; optoelectronic devices; power integrated circuits; power transistors; semiconductor junction lasers; semiconductor technology; solid-state microwave devices; superconductivity; BiCMOS; CMOS technology; Conference 1988; III-V FETs; MOS devices; MOS power devices; advanced bipolar devices; bipolar IC technology; capacitor dielectrics; chemical sensors; discrete power devices; displays; dynamic memories; fast wave devices; gate dielectrics; high-speed III-V semiconductor devices; high-speed logic; high-voltage integrated circuits; hot-carrier effects; image sensors; interconnect technology; isolation; large-area devices; lithography; low-temperature device operation; micromachines transducers; microwave tubes; nonvolatile memories; optoelectronic devices; semiconductor lasers; silicon sensors; static memory technology; superconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32733
Filename
32733
Link To Document