• DocumentCode
    2133418
  • Title

    Lateral bipolar magnetotransistors with enhanced emitter injection modulation and carrier deflection

  • Author

    Avram, Marioara ; Neagoe, Otilia ; Lipan, Tudor

  • Author_Institution
    Nat. Inst. of Res. & Dev. for Microtechnol., Bucharest, Romania
  • Volume
    2
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    519
  • Abstract
    Two types of integrated magnetotransistors based on enhanced modulation of emitter injection and carrier deflection are presented. The absolute magnetosensitivity of the devices is about 1 to 5 mV/mT. The relative magnetosensitivity is in the range 1-5 T-1 at collector currents of the order of 0.5 mA. Between the magnetic field and the output signal exists a linear dependence for certain biasing conditions
  • Keywords
    bipolar transistors; carrier mobility; carrier deflection; enhanced emitter injection modulation; lateral bipolar magnetotransistors; magnetic field; output signal; Electrons; Kinetic theory; Lorentz covariance; Magnetic devices; Magnetic fields; Magnetic modulators; P-n junctions; Research and development; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651300
  • Filename
    651300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2133418