Title :
Lateral bipolar magnetotransistors with enhanced emitter injection modulation and carrier deflection
Author :
Avram, Marioara ; Neagoe, Otilia ; Lipan, Tudor
Author_Institution :
Nat. Inst. of Res. & Dev. for Microtechnol., Bucharest, Romania
Abstract :
Two types of integrated magnetotransistors based on enhanced modulation of emitter injection and carrier deflection are presented. The absolute magnetosensitivity of the devices is about 1 to 5 mV/mT. The relative magnetosensitivity is in the range 1-5 T-1 at collector currents of the order of 0.5 mA. Between the magnetic field and the output signal exists a linear dependence for certain biasing conditions
Keywords :
bipolar transistors; carrier mobility; carrier deflection; enhanced emitter injection modulation; lateral bipolar magnetotransistors; magnetic field; output signal; Electrons; Kinetic theory; Lorentz covariance; Magnetic devices; Magnetic fields; Magnetic modulators; P-n junctions; Research and development; Silicon; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651300
