Title :
A test circuit for second breakdown suitable for routine measurements
Author :
Khamneian, Sara ; Lauritzen, Peter
Author_Institution :
Department of Electrical Engineering, University of Washington Seattle WA, USA
Abstract :
Damage to a transistor is prevented during testing by turning on its base simultaneously with the onset of reverse biased second breakdown. Test data is similiar to that obtained with crowbar circuits. Repetitive observation is possible, but after about 10,000 test cycles, some transistors show degradation above Ic = 1A.
Keywords :
Degradation; Electric breakdown; NIST; Stress; Testing; Thyristors; Transistors;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1987 IEEE
Conference_Location :
San Diego, CA USA
DOI :
10.1109/APEC.1987.7067147
