DocumentCode
2133659
Title
Large Signal and Noise Modeling of HEMT Devices including Frequency and Temperature Effects
Author
Sinnesbichler, F. ; Felgentreff, T. ; Olbrich, G.R.
Author_Institution
Technische Universitaet Muenchen, Lehrstuhl fuer Hochfrequenztechnik, ArcisstraÃ\x9fe 21, 80290 Muenchen, Germany. Phone: +49 (89) 2892 8390, Fax: +49 (89) 2892 3365
Volume
1
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
428
Lastpage
431
Abstract
In this paper we present a novel physics based large signal HEMT model which describes the signal properties and the low and high frequency noise behavior in the frequency range from 1 Hz to 40 GHz. The modeling includes also dispersion and thermal effects of the active device which at this time are only considered in small signal models. The model is used in amplifier and oscillator applications. Calculation products are compared with measurement results.
Keywords
Active noise reduction; Dispersion; Frequency; HEMTs; Low-frequency noise; Oscillators; Power dissipation; Scattering parameters; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337836
Filename
4138877
Link To Document