Title :
Large Signal and Noise Modeling of HEMT Devices including Frequency and Temperature Effects
Author :
Sinnesbichler, F. ; Felgentreff, T. ; Olbrich, G.R.
Author_Institution :
Technische Universitaet Muenchen, Lehrstuhl fuer Hochfrequenztechnik, ArcisstraÃ\x9fe 21, 80290 Muenchen, Germany. Phone: +49 (89) 2892 8390, Fax: +49 (89) 2892 3365
Abstract :
In this paper we present a novel physics based large signal HEMT model which describes the signal properties and the low and high frequency noise behavior in the frequency range from 1 Hz to 40 GHz. The modeling includes also dispersion and thermal effects of the active device which at this time are only considered in small signal models. The model is used in amplifier and oscillator applications. Calculation products are compared with measurement results.
Keywords :
Active noise reduction; Dispersion; Frequency; HEMTs; Low-frequency noise; Oscillators; Power dissipation; Scattering parameters; Temperature; Voltage;
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
DOI :
10.1109/EUMA.1997.337836
