DocumentCode :
21341
Title :
A 16.5–28 GHz 0.18- 
m BiCMOS Power Amplifier With Flat 
dBm Output Pow
Author :
Kyoungwoon Kim ; Cam Nguyen
Author_Institution :
Electr. & Comput. Eng. Dept., Texas A&M Univ., College Station, TX, USA
Volume :
24
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
108
Lastpage :
110
Abstract :
A broadband fully integrated power amplifier (PA) with 3 dB bandwidth from 16.5 to 28 GHz was designed using a 0.18 μm SiGe BiCMOS process. The PA consists of a drive amplifier and two parallel main amplifiers. Lumped-element Wilkinson power divider and combiner are especially used to combine the main amplifiers as well as to provide suppression for the harmonics through their inherent low-pass filtering characteristic. The PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4±1.2 dBm across 16.5-28 GHz, and power added efficiency (PAE) higher than 20% and 17% between 16-24.5 GHz and up to 28 GHz, respectively. Specifically at 24 GHz, it achieves 19.4 dBm output power, 22.3% PAE, and 37.6 dB gain.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC power amplifiers; low-pass filters; lumped parameter networks; power combiners; power dividers; semiconductor materials; BiCMOS power amplifier; SiGe BiCMOS process; bandwidth 16 GHz to 28 GHz; broadband fully integrated power amplifier; drive amplifier; flat output power; gain 37.6 dB; low-pass filtering characteristic; lumped-element Wilkinson power divider; parallel main amplifiers; power added efficiency; power combiner; size 0.18 mum; Bandwidth; CMOS integrated circuits; Gain; Power dividers; Power generation; Power measurement; Transmission line measurements; CMOS/BiCMOS power amplifier; RFIC; power amplifier (PA);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2013.2290219
Filename :
6681938
Link To Document :
