DocumentCode
2134260
Title
Room-temperature continuous-wave operation of a 1.3-μm npn-AlGaInAs/InP transistor laser
Author
Sato, Noriaki ; Shirao, Mizuki ; Sato, Takashi ; Yukinari, Masashi ; Nishiyama, Nobuhiko ; Amemiya, Tomohiro ; Arai, Shigehisa
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
18
Lastpage
19
Abstract
A room-temperature continuous-wave operation of a 1.3-μm npn-AlGaInAs/InP transistor laser was demonstrated for the first time. The threshold current and external differential efficiency were 39 mA and 13%, respectively, under common base configuration.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; phototransistors; semiconductor lasers; AlGaInAs-InP; current 39 mA; efficiency 13 percent; external differential efficiency; integrated optics; npn transistor laser; room-temperature continuous-wave operation; temperature 293 K to 298 K; threshold current; wavelength 1.3 mum; Cleaning; Fiber lasers; Indium phosphide; Modulation; Threshold current; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348306
Filename
6348306
Link To Document