DocumentCode
2134272
Title
Sub-kHz linewidth GaSb semiconductor diode lasers operating near 2 μm
Author
Bagheri, Mahmood ; Briggs, Ryan M. ; Frez, Clifford ; Ksendzov, Alexander ; Forouhar, Siamak
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
20
Lastpage
21
Abstract
We report on the phase noise properties of DFB lasers operating near 2.0 μm. Measured noise spectra indicate intrinsic linewidths below 1 kHz. Less than 200 kHz effective linewidth is estimated for 5 ms measurement time.
Keywords
III-V semiconductors; distributed feedback lasers; gallium compounds; laser noise; phase noise; quantum well lasers; spectral line breadth; DFB lasers; GaSb; measurement time; noise spectra; phase noise properties; subkHz linewidth semiconductor diode lasers; time 5 ms; Gas lasers; Laser modes; Laser noise; Measurement by laser beam; Power lasers; Semiconductor device measurement; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348307
Filename
6348307
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