Title :
Diode lasers operating in spectral range from 1.9 to 3.5 μm
Author :
Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Liang, R. ; Jung, S. ; Westerfeld, D. ; Belenky, G.
Author_Institution :
Dept. of ECE, Stony Brook Univ., Stony Brook, NY, USA
Abstract :
This work reports on progress in development of the metamorphic GaSb-based laser heterostructures and fabrication of the diffraction limited laser diodes.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical fabrication; quantum well lasers; semiconductor heterojunctions; GaSb-GaInSb-AlGaInSb; diffraction limited laser diodes; metamorphic GaSb-based laser heterostructures; wavelength 1.9 mum to 3.5 mum; Diffraction; Diode lasers; Gas lasers; Laser modes; Materials; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348309
