Configurable Active-Region-Cutout-Transistor for radiation hardened circuit applications

Active-region-cutout (ARC) technique was developed to modify transistorpsilas active region in order to overcome shorted source-drain in an enclosed poly MOS device. The gate poly extension was made through the unipotential electrode of the active region of drain. This new transistor is named as active-region-cutout-transistor (ARCT). The latter transistor is known to be very tolerant to total ionization dose radiation. ARC technique has an advantage of making MOSFETs with more than three terminals. The ARC can be used to make a compound MOSFET. Two types of amplifier circuits have been studied by replacing transistors with compound ARCTs.