DocumentCode
2134494
Title
>200 nm gain-bandwidth hybrid silicon laser array using quantum well intermixing
Author
Jain, Siddharth R. ; Sysak, Matthew N. ; Bowers, John E.
Author_Institution
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
1
Lastpage
2
Abstract
Using a single epitaxial structure, multiple CW operational DFB lasers with backside photodetectors, emitting over a 200 nm range from 1250-1450 nm are integrated on silicon. Four bandgaps spread over >;100 nm were realized using quantum well intermixing for increased spectral gain.
Keywords
III-V semiconductors; distributed feedback lasers; elemental semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; integrated optics; photodetectors; quantum well lasers; semiconductor laser arrays; silicon; Si-InGaAsP; backside photodetectors; bandgaps; hybrid silicon laser array; multiple CW operational DFB lasers; quantum well intermixing; single epitaxial structure; spectral gain; wavelength 1250 nm to 1450 nm; Arrays; Bonding; Distributed feedback devices; Epitaxial growth; Photonic band gap; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348315
Filename
6348315
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