Title :
Digital modulation at 20 GBit/s of an InAs/InGaAlAs/InP quantum dot laser operating in the telecom wavelength range
Author :
Ivanov, V. ; Gilfert, C. ; Schnabel, F. ; Rippien, A. ; Reithmaier, J.P. ; Gready, D. ; Eisenstein, G. ; Bornholdt, C.
Author_Institution :
Inst. of Nanostruct. Technol. & Analytics, Univ. Kassel, Kassel, Germany
Abstract :
We report on the static and dynamic characteristics of InAs/InGaAlAs/InP quantum dot lasers. The lasers exhibit a record model gain of >; 70 cm-1 with 6 QD layers and reached with an optimized active region design a record digital modulation rate of 20 GBit/s at 1.55 μm wavelength range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication; optical modulation; quantum dot lasers; semiconductor quantum dots; InAs-InGaAlAs-InP; bit rate 20 Gbit/s; dynamic characteristics; optimized active region design; quantum dot lasers; record digital modulation rate; record model gain; static characteristics; telecom wavelength range; wavelength 1.55 mum; Digital modulation; Gain; Laser modes; Masers; Quantum dot lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348317
