Title :
Latest performance of GaN-based nonpolar/semipolar emitting devices
Author_Institution :
Mater. & ECE Depts., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
High efficient GaN-based blue &green nonpolar/semipolar LEDs and laser diodes are developed with an advantage of much smaller piezoelectric field, and non-isotropic strain to change the energy band structures. Semipolar LEDs are fabricated. The spectrum width of those LEDs is much narrower than that of conventional c-pain and other semipolar/nonpolar LEDs. The blue-shift of the peak emission wavelength of LEDs is almost negligible in comparison with that of the conventional c-plain and other semipolar/nonpolar LEDs. Nonpolar blue & green laser diodes are fabricated.
Keywords :
III-V semiconductors; band structure; gallium compounds; light emitting diodes; semiconductor lasers; spectral line shift; wide band gap semiconductors; GaN; GaN-based nonpolar-semipolar emitting devices; blue-shift; emission wavelength; energy band structure; high efficient GaN-based blue nonpolar-semipolar LED; high efficient GaN-based green nonpolar-semipolar LED; nonisotropic strain; nonpolar blue laser diodes; nonpolar green laser diodes; piezoelectric field; spectrum width; Diode lasers; Educational institutions; Green products; Light emitting diodes; Materials; Performance evaluation; Solid state lighting;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348319
