Latest performance of GaN-based nonpolar/semipolar emitting devices

Author

Nakamura, Shuji

Author_Institution

Mater. & ECE Depts., Univ. of California, Santa Barbara, Santa Barbara, CA, USA

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

1

Lastpage

1

Abstract

High efficient GaN-based blue &green nonpolar/semipolar LEDs and laser diodes are developed with an advantage of much smaller piezoelectric field, and non-isotropic strain to change the energy band structures. Semipolar LEDs are fabricated. The spectrum width of those LEDs is much narrower than that of conventional c-pain and other semipolar/nonpolar LEDs. The blue-shift of the peak emission wavelength of LEDs is almost negligible in comparison with that of the conventional c-plain and other semipolar/nonpolar LEDs. Nonpolar blue & green laser diodes are fabricated.

Keywords

III-V semiconductors; band structure; gallium compounds; light emitting diodes; semiconductor lasers; spectral line shift; wide band gap semiconductors; GaN; GaN-based nonpolar-semipolar emitting devices; blue-shift; emission wavelength; energy band structure; high efficient GaN-based blue nonpolar-semipolar LED; high efficient GaN-based green nonpolar-semipolar LED; nonisotropic strain; nonpolar blue laser diodes; nonpolar green laser diodes; piezoelectric field; spectrum width; Diode lasers; Educational institutions; Green products; Light emitting diodes; Materials; Performance evaluation; Solid state lighting;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348319

Filename

6348319