Drain avalanche hot hole injection mode on PMOSFETs

Author

Matsuoka, F. ; Hayashida, H. ; Hama, K. ; Toyoshima, Y. ; Iwai, H. ; Maeguchi, K.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

18

Lastpage

21

Abstract

Hot carrier degradation was studied for surface-channel (p/sup +/ polysilicon-gate) PMOSFETs in comparison with buried-channel (n/sup +/ polysilicon-gate) PMOSFETs. In the shallow gate bias region, a carrier degradation mode by drain avalanche hot-hole injection was found for the surface-channel PMOSFETs. Here, trapped holes and interface state generation, which were not observed in the buried-channel PMOSFETs, were detected. In the deep-gate-bias region, a channel hot-hole interface-state-generation mode without the threshold voltage shift was found for both types of PMOSFETs studied.<>

Keywords

hot carriers; insulated gate field effect transistors; PMOSFETs; buried-channel; carrier degradation mode; channel hot-hole interface-state-generation mode; deep-gate-bias region; drain avalanche hot-hole injection; interface state generation; n/sup +/ polycrystalline Si; p/sup +/ polycrystalline Si-SiO/sub 2/; shallow gate bias region; surface-channel; threshold voltage shift; trapped holes; Boron; Current measurement; Degradation; Electron traps; Hot carriers; Interface states; MOSFETs; Secondary generated hot electron injection; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32739

Filename

32739