1550 nm AlGaInAs/InP widely tunable BH laser based on arrayed DFB

Author

Iwai, N. ; Wakaba, M. ; Kobayakawa, M. ; Kiyota, K. ; Kurobe, T. ; Kobayashi, G. ; Kimoto, T. ; Tamura, S. ; Mukaihara, T. ; Yokouchi, N. ; Ishii, H. ; Kasukawa, A.

Author_Institution

Yokohama R&D Labs., Furukawa Electr. Co., Ltd., Yokohama, Japan

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

38

Lastpage

39

Abstract

We have fabricated high performance 1550nm both solitary lasers and the 12-channel arrayed DFB/SOA integrated widely tunable lasers with buried-heterostructure configuration in the AlGaInAs/InP system. An output power of 100mW was obtained for tunable lasers at 20°C.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; laser tuning; optical fabrication; semiconductor laser arrays; semiconductor optical amplifiers; 12-channel arrayed DFB-SOA integrated widely-tunable lasers; AlGaInAs-InP; buried-heterostructure configuration; optical fabrication; power 100 mW; solitary lasers; temperature 20 degC; wavelength 1550 nm; widely-tunable BH laser; Indium phosphide; Laser tuning; Power generation; Power lasers; Semiconductor optical amplifiers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348323

Filename

6348323