Light controlled oscillators; pixel architecture for large area linear digital imaging using amorphous silicon

Author

Taghibakhsh, Farhad ; Karim, Karim S.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Waterloo, ON

fYear

2008

fDate

4-7 May 2008

Abstract

The theory of operation and experimental results of a light controlled thin film transistor (TFT) oscillator circuits in amorphous silicon (a-Si) technology are presented. The circuit consists of a three-stage ring oscillator made of a top-gate TFT as driver and a photoconductor detector as the load for each stage, all fabricated in-house using a four mask top-gate process. Measurements indicate linear operation of the circuit up to 160 kHz output frequency with a sensitivity of 13.8 kHz/muW optical power at a biasing voltage of 25 V.

Keywords

amorphous semiconductors; elemental semiconductors; image processing; oscillators; silicon; thin film transistors; amorphous silicon; large area linear digital imaging; light controlled thin film transistor oscillator circuits; photoconductor detector; pixel architecture; three-stage ring oscillator; top-gate TFT; Amorphous silicon; Detectors; Digital images; Driver circuits; Lighting control; Photoconducting devices; Pixel; Power measurement; Ring oscillators; Thin film transistors; Digital imaging; amorphous silicon; large area electronics; light controlled oscillator; thin film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2008. CCECE 2008. Canadian Conference on

Conference_Location

Niagara Falls, ON

ISSN

0840-7789

Print_ISBN

978-1-4244-1642-4

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2008.4564745

Filename

4564745