Title :
A thick film semiconductor NOx detector
Author :
Telipan, Gabriela ; Bodea, Emil ; Petrescu, Gamelia ; Motataianu, Mihi
Author_Institution :
R&D Inst. for Electr. Eng., Bucharest, Romania
Abstract :
The paper presents a NOx detector made by thick film technology. The two plated electrodes using a conductive Pd-Ag ink were deposited on one side of the alumina substrate. A thick-film heater material is pasted on the other side of the substrate the sensitive film, was produced, by a TiO2-Al2O3 resistive ink. The device electrical resistance decrease from 200 KΩ in pure air to 36 KΩ in a 2000 ppm NOx atmosphere for a working temperature of 450°C
Keywords :
electric sensing devices; gas sensors; nitrogen compounds; thick film devices; 200 kohm; 36 kohm; NO; Pd-Ag; TiO2-Al2O3; TiO2-Al2O3 resistive ink; alumina substrate; conductive Pd-Ag ink; device electrical resistance; thick film semiconductor NOx detector; Atmosphere; Conducting materials; Detectors; Electric resistance; Electrodes; Ink; Paper technology; Semiconductor materials; Substrates; Thick films;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651305
