Title :
4-Wavelength 25.8-Gbps directly modulated laser array of 1.3-μm AlGaInAs distributed-reflector lasers
Author :
Simoyama, T. ; Matsuda, M. ; Okumura, S. ; Uetake, A. ; Ekawa, M. ; Yamamoto, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
AlGaInAs distributed-reflector-laser arrays with four different wavelengths on LAN-WDM grid are demonstrated. Each laser provided output power of over 10 mW at 50°C under simultaneous operation and operated at 25.8 Gbps under push-pull driving configuration.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical fibre LAN; optical modulation; optical transmitters; quantum well lasers; semiconductor laser arrays; wavelength division multiplexing; AlGaInAs; LAN-WDM grid; bit rate 25.8 Gbit/s; directly modulated laser array; distributed-reflector lasers; push-pull driving configuration; temperature 50 degC; wavelength 1.3 mum; Arrays; Distributed Bragg reflectors; Measurement by laser beam; Modulation; Power lasers; Semiconductor laser arrays;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348331
