40-Gb/s/ch operation of 1.3-μm four-wavelength lens-integrated surface-emitting DFB laser array

Author

Adachi, K. ; Shinoda, K. ; Kitatani, T. ; Kawamura, D. ; Sugawara, T. ; Tsuji, S.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

58

Lastpage

59

Abstract

40-Gb/s/ch direct modulation of multi-wavelength 1.3-μm surface-emitting laser array is demonstrated. Fabricated laser array consisting of four-channel DFB stripes with modified gratings, 45° mirror, and integrated lens, exhibited clear 40-Gb/s eye openings over all four channels.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; laser mirrors; lenses; optical fabrication; optical modulation; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; InGaAlAs; bit rate 40 Gbit/s; direct modulation; distributed feedback lasers; four-channel DFB stripes; four-wavelength lens-integrated surface-emitting DFB laser array; mirror; modified gratings; multiple-quantum-well DFB active stripes; multiwavelength surface-emitting laser array; optical fabrication; wavelength 1.3 mum; Arrays; Bandwidth; Modulation; Optical surface waves; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Conference_Location

San Diego, CA

ISSN

0899-9406

Print_ISBN

978-1-4577-0828-2

Type

conf

DOI

10.1109/ISLC.2012.6348333

Filename

6348333