Title :
1.3-μm-range InGaAs metamorphic laser for low power consumption operation
Author :
Arai, Masakazu ; Kobayashi, Wataru ; Kohtoku, Masaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We demonstrated a 1.3-μm-range metamorphic short cavity laser with a high characteristic temperature (T0=200K). The bias current for 10-Gbps modulation at high temperature was reduced and we revealed the potential for low-power consumption operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical modulation; optical transmitters; quantum well lasers; thermo-optical devices; InGaAs; bias current; bit rate 10 Gbit/s; characteristic temperature; low power consumption operation; metamorphic short cavity laser; temperature 200 K; wavelength 1.3 mum; Gallium arsenide; Indium gallium arsenide; Power lasers; Substrates; Temperature; Temperature dependence;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348334
