Title :
Carrier temperature and threshold current density of quantum dot lasers
Author :
Hutchings, M. ; O´Driscoll, I. ; Smowton, P.M. ; Blood, P.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
Measured carrier temperatures of quantum dots lasers, between 200 K and 400 K, are different to that of the lattice and depend on doping type. This has consequences for thresholds and device models.
Keywords :
current density; quantum dot lasers; semiconductor device models; semiconductor doping; carrier temperature; device models; doping; quantum dot lasers; temperature 200 K to 400 K; threshold current density; Lattices; Measurement by laser beam; Quantum dot lasers; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348337
