• DocumentCode
    2135023
  • Title

    Carrier temperature and threshold current density of quantum dot lasers

  • Author

    Hutchings, M. ; O´Driscoll, I. ; Smowton, P.M. ; Blood, P.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    66
  • Lastpage
    67
  • Abstract
    Measured carrier temperatures of quantum dots lasers, between 200 K and 400 K, are different to that of the lattice and depend on doping type. This has consequences for thresholds and device models.
  • Keywords
    current density; quantum dot lasers; semiconductor device models; semiconductor doping; carrier temperature; device models; doping; quantum dot lasers; temperature 200 K to 400 K; threshold current density; Lattices; Measurement by laser beam; Quantum dot lasers; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348337
  • Filename
    6348337
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2135023