Title :
110 °C operation of monolithic quantum dot passively mode-locked lasers
Author :
Mee, J.K. ; Crowley, M.T. ; Patel, N. ; Murrell, D. ; Raghunathan, R. ; Aboketaf, A. ; Elshaari, A. ; Preble, S.F. ; Ampadu, P. ; Lester, L.F.
Author_Institution :
AFRL/RVSE, Kirtland AFB, NM, USA
Abstract :
Record performance over temperature is reported in a two-section InAs/GaAs quantum dot passively mode-locked laser. Stable pulses with less than 18 ps full-width-half-max are observed from 20-110 °C.
Keywords :
III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; laser mode locking; laser stability; quantum dot lasers; InAs-GaAs; excited state operation; ground state operation; monolithic quantum dot passively mode locked lasers; stable pulses; temperature 20 degC to 110 degC; Optical filters; Optical pulses; Optical ring resonators; Optical transmitters; Quantum dot lasers; Temperature measurement; Wavelength division multiplexing;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348338
