• DocumentCode
    2135150
  • Title

    Evaluating InAs QD lasers for space borne applications

  • Author

    O´Driscoll, L. ; Blood, P. ; Sobiesierski, A. ; Gwilliam, R. ; Smowton, P.M.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2012
  • fDate
    7-10 Oct. 2012
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    Decrease of photoluminescence with increasing dose is due to bombardment induced wetting layer non-radiative recombination. To exploit the relative radiation immunity of QD lasers one should maximise the QD density and capture probability per dot.
  • Keywords
    III-V semiconductors; indium compounds; photoluminescence; quantum dot lasers; wetting; InAs; QD density; bombardment induced wetting layer nonradiative recombination; photoluminescence; quantum dot lasers; radiation immunity; space borne lasers; Absorption; Charge carrier lifetime; Materials; Optical variables measurement; Protons; Quantum dot lasers; Stationary state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    0899-9406
  • Print_ISBN
    978-1-4577-0828-2
  • Type

    conf

  • DOI
    10.1109/ISLC.2012.6348344
  • Filename
    6348344
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2135150