Title :
Evaluating InAs QD lasers for space borne applications
Author :
O´Driscoll, L. ; Blood, P. ; Sobiesierski, A. ; Gwilliam, R. ; Smowton, P.M.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
Decrease of photoluminescence with increasing dose is due to bombardment induced wetting layer non-radiative recombination. To exploit the relative radiation immunity of QD lasers one should maximise the QD density and capture probability per dot.
Keywords :
III-V semiconductors; indium compounds; photoluminescence; quantum dot lasers; wetting; InAs; QD density; bombardment induced wetting layer nonradiative recombination; photoluminescence; quantum dot lasers; radiation immunity; space borne lasers; Absorption; Charge carrier lifetime; Materials; Optical variables measurement; Protons; Quantum dot lasers; Stationary state;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348344
