Title :
Characterization of recombination processes in quantum dot lasers using small signal modulation
Author :
Zhou, K. ; Wada, O. ; Chen, S. ; Zhang, Z. ; Childs, D.T.D. ; Kennedy, K. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
The effect of modulation p-doping of 1.3μm quantum dot lasers is studied by spectrally resolved small-signal modulation. We describe the effect of modulation p-doping and temperature on their recombination coefficients, of importance for temperature-insensitive lasers.
Keywords :
III-V semiconductors; gallium arsenide; laser transitions; optical modulation; quantum dot lasers; semiconductor doping; semiconductor quantum dots; silicon; GaAs:Si; modulation p-doping effect; quantum dot lasers; recombination coefficients; recombination processes; spectrally-resolved small-signal modulation; temperature-insensitive lasers; wavelength 1.3 mum; Charge carrier lifetime; Current density; Modulation; Quantum dot lasers; Radiative recombination; Temperature distribution; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348347
