DocumentCode
2135329
Title
Evaluation of 2ND and 3RD Order Intermodulation Distortion of Cascaded MESFET´s
Author
Pedro, José Carlos ; Domingues, Paulo Grilo
Author_Institution
Instituto de Telecomunicações - Universidade de Aveiro - 3800 AVEIRO - Portugal. Tel: 351-34-383089 / FAX: 351-34-383091 / E-mail: jcpedro@gm400.det.ua.pt
Volume
2
fYear
1997
fDate
8-12 Sept. 1997
Firstpage
739
Lastpage
744
Abstract
2nd and 3rd order intermodulation distortion, IMD, produced in a cascade of GaAs MESFET´s, is, for the first time, evaluated. The conclusions were drawn from both numerical simulations and simple analytic calculations, using Volterra Series techniques, and specific nonlinear device modeling for IMD prediction. Cascode, asymmetric differential pair and common-source chain configurations are addressed, and conditions for IMD reduction are investigated. Laboratory results obtained with such a prototype validate the approach.
Keywords
Character generation; Gallium arsenide; Intermodulation distortion; Laboratories; MESFETs; Numerical simulation; Predictive models; Prototypes; Telecommunications; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1997. 27th European
Conference_Location
Jerusalem, Israel
Type
conf
DOI
10.1109/EUMA.1997.337882
Filename
4138934
Link To Document