• DocumentCode
    2135357
  • Title

    State of the art Integrated InGaP/GaAs HBT-DRO with -124 dBc/Hz at 6.7 GHz

  • Author

    Perez, S. ; Floriot, D. ; Maurin, Ph. ; Bouquet, Ph. ; Gutierrez, P.M. ; Obregon, J. ; Delage, S.L.

  • Author_Institution
    Universidad de Salamanca. Departamento de Fisica Aplicada; Plaza de la Merced s/n 37001 Salamanca - Spain
  • Volume
    2
  • fYear
    1997
  • fDate
    8-12 Sept. 1997
  • Firstpage
    745
  • Lastpage
    748
  • Abstract
    We report on the design of an ultra-low noise GaInP/ GaAs HBT DRO working at 6.7 GHz. Experimental results give a PM noise of - 124 dBc/Hz at 10 kHz off-carrier. A comparison has been performed with a SiBJT DRO using strictly the same oscillator topology. We obtain at least 14 dB improvement wit HBT DRO, demonstrating the superiority of the HBT to produce high quality low phase noise microwave sources.
  • Keywords
    Capacitance; Circuit topology; Coupling circuits; Dielectric substrates; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Oscillators; Phase noise; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1997. 27th European
  • Conference_Location
    Jerusalem, Israel
  • Type

    conf

  • DOI
    10.1109/EUMA.1997.337883
  • Filename
    4138935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2135357