Title :
Compact thermal model for HBT devices
Author :
Burton, Richard ; Vijayakumar, Bhuvaneshwaran
Author_Institution :
Skyworks Solutions Inc., Irvine, CA
fDate :
May 30 2006-June 2 2006
Abstract :
A compact thermal model has been developed to accurately (within 5%) predict the thermal resistance of HBT arrays. The HBT power sources are modeled as spherical heat sources. The temperature distribution and hence the thermal resistance of a single device is modeled first. Method of translation that takes advantage of the linearity of the heat transfer equation is then used to calculate the temperature distribution of an array of devices. The compact model is valid for the typical ranges of die attach thickness and thermal conductivity used. The method has been validated using finite element simulations. The accuracy of the model is also verified using experimental results presented. InGaP/GaAs based HBTs were used for measurements
Keywords :
III-V semiconductors; finite element analysis; gallium arsenide; gallium compounds; heat transfer; heterojunction bipolar transistors; indium compounds; semiconductor device models; temperature distribution; thermal conductivity; thermal resistance; HBT devices; HBT power sources; InGaP-GaAs; compact thermal model; die attach thickness; finite element simulations; heat transfer equation; heterojunction bipolar transistors; spherical heat sources; temperature distribution; thermal conductivity; thermal resistance; Equations; Finite element methods; Heat transfer; Heterojunction bipolar transistors; Linearity; Microassembly; Predictive models; Temperature distribution; Thermal conductivity; Thermal resistance;
Conference_Titel :
Thermal and Thermomechanical Phenomena in Electronics Systems, 2006. ITHERM '06. The Tenth Intersociety Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9524-7
DOI :
10.1109/ITHERM.2006.1645407
