Electron beam damage of advanced silicon bipolar transistors and circuits

Author

Jenkins, K.A. ; Cressler, J.D.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

30

Lastpage

33

Abstract

The effect of the irradiation of modern bipolar transistors with energetic electrons (5 to 30 keV) is investigated. The range of energies corresponds to those used for electron-beam lithography and testing. The transistors used for this study were deep-trench-isolated self-aligned, double-polysilicon, n-p-n bipolar transistors, processed with one level of metal. The physical mechanism is described and dose-energy sensitivities are established. The requirements for annealing the damage are determined.<>

Keywords

bipolar integrated circuits; bipolar transistors; electron beam effects; electron beam lithography; elemental semiconductors; semiconductor device testing; silicon; 5 to 30 keV; deep-trench-isolated; dose-energy sensitivities; electron beam testing; electron-beam lithography; n-p-n bipolar transistors; physical mechanism; polycrystalline Si; requirements for annealing; self-aligned; semiconductors; Annealing; Bipolar transistors; Circuits; Current measurement; Degradation; Electron beams; Isolation technology; Lithography; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32742

Filename

32742