Title :
Hybrid quantum well/quantum dot active element for broad spectral bandwidth emitters and amplifiers
Author :
Chen, S. ; Zhou, K. ; Zhang, Z. ; Wada, O. ; Childs, D.T.D. ; Kennedy, K. ; Hugues, M. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
Broad spectral band-width spontaneous emission and gain is achieved by utilizing a hybrid quantum-well/quantum dot active element. The importance of carrier transport and positioning of the QW within the active region is discussed.
Keywords :
III-V semiconductors; amplifiers; gallium compounds; indium compounds; laser transitions; quantum dot lasers; quantum well lasers; semiconductor quantum dots; semiconductor quantum wells; spontaneous emission; InGaAs; broad spectral band-width spontaneous emission; broad spectral bandwidth amplifiers; broad spectral bandwidth emitters; carrier transport; gain spectra; hybrid quantum well-quantum dot active element; laser transition; positioning effect; three-state lasing; Bandwidth; Current density; Lasers; Optical fiber amplifiers; Quantum dots; Spontaneous emission;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348358
