DocumentCode
2135583
Title
Gain characterization of electrically-pumped VECSELs
Author
Pallmann, W.P. ; Mangold, M. ; Wittwer, V.J. ; Tilma, B.W. ; Moench, H. ; Gronenborn, S. ; Miller, M. ; Südmeyer, T. ; Keller, U.
Author_Institution
Dept. of Phys., ETH Zurich, Zurich, Switzerland
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
122
Lastpage
123
Abstract
We present the first detailed gain characterization of electrically-pumped VECSELs. Spectral dependence of the gain and the gain saturation behavior of three samples with different field enhancement in the quantum-well layers are investigated.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; optical pumping; quantum well lasers; semiconductor quantum wells; surface emitting lasers; AlGaAs; electrically-pumped VECSEL; field enhancement; gain characterization; gain saturation behavior; gain spectral dependence; laser cavity resonator; quantum-well layers; vertical external cavity surface emitting lasers; Current measurement; Gain measurement; Laser modes; Temperature measurement; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348359
Filename
6348359
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