Title :
Semiconductor optical amplifiers operated as modulators with high extinction
Author :
Ackley, Donald E. ; Connolly, John C. ; Guenther, Harald
Author_Institution :
Innovative Photonics Solutions, Monmouth Junction, NJ, USA
Abstract :
Semiconductor optical amplifiers (SOAs) have been demonstrated which operate as modulators at 780/808 nm with high output powers, excellent extinction, and narrow linewidths. Using an ECL laser as a seed laser in a MOPA configuration, extinction ratios >;30 dB were observed. By utilizing both a reverse bias to improve the extinction ratio and pulsed forward drive to modulate the amplifier, output powers of >;10 mW were demonstrated at high extinction.
Keywords :
laser cavity resonators; optical modulation; semiconductor optical amplifiers; ECL laser; MOPA configuration; SOA; external cavity laser; extinction ratio; linewidths; modulators; output power; pulsed forward drive; seed laser; semiconductor optical amplifiers; wavelength 780 nm; wavelength 808 nm; Extinction ratio; Modulation; Optical fiber amplifiers; Power amplifiers; Power generation; Semiconductor optical amplifiers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348365
