DocumentCode
2135831
Title
The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number
Author
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
82
Lastpage
83
Abstract
We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.
Keywords
Debye temperature; III-V semiconductors; indium compounds; optical fabrication; quantum dot lasers; semiconductor quantum dots; InAs; characteristic temperature dependence; highly-stacked quantum dot laser diodes; optical fabrication; stacking layer number; strain-compensation technique; Diode lasers; Fabrication; Quantum dot lasers; Stacking; Temperature; Temperature dependence; highly stacking; quantum dot; semiconductor laser; strain-compensation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348369
Filename
6348369
Link To Document