DocumentCode :
2135831
Title :
The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
fYear :
2012
fDate :
7-10 Oct. 2012
Firstpage :
82
Lastpage :
83
Abstract :
We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.
Keywords :
Debye temperature; III-V semiconductors; indium compounds; optical fabrication; quantum dot lasers; semiconductor quantum dots; InAs; characteristic temperature dependence; highly-stacked quantum dot laser diodes; optical fabrication; stacking layer number; strain-compensation technique; Diode lasers; Fabrication; Quantum dot lasers; Stacking; Temperature; Temperature dependence; highly stacking; quantum dot; semiconductor laser; strain-compensation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
ISSN :
0899-9406
Print_ISBN :
978-1-4577-0828-2
Type :
conf
DOI :
10.1109/ISLC.2012.6348369
Filename :
6348369
Link To Document :
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