Title :
The dependence of the characteristic temperature of highly stacked InAs quantum dot laser diodes fabricated using a strain-compensation technique on stacking layer number
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
Abstract :
We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique. We analyzed the characteristic temperature and found that it increased with increasing number of stacking layers.
Keywords :
Debye temperature; III-V semiconductors; indium compounds; optical fabrication; quantum dot lasers; semiconductor quantum dots; InAs; characteristic temperature dependence; highly-stacked quantum dot laser diodes; optical fabrication; stacking layer number; strain-compensation technique; Diode lasers; Fabrication; Quantum dot lasers; Stacking; Temperature; Temperature dependence; highly stacking; quantum dot; semiconductor laser; strain-compensation;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348369
