Author :
Grandjean, Nicolas
Author_Institution :
Inst. of Condensed Matter Phys. (ICMP), Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
High-quality factor microcavities (MCs) are mandatory for polariton lasing. However, MCs are quite difficult to achieve in III-V nitrides because of the large lattice mismatch between GaN and AlN binary compounds. To circumvent this issue, lattice-matched AlInN alloy was implemented. AlInN/GaN based MCs with quality factors in excess of 6000 have then been fabricated. Combining such MCs to GaN quantum wells exhibiting low inhomogeneous broadening allowed to achieve Rabi splitting in excess of 50 meV.
Keywords :
III-V semiconductors; Q-factor; aluminium compounds; gallium compounds; indium compounds; microcavity lasers; optical fabrication; polaritons; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; AlInN-GaN; III-V nitrides; Rabi splitting; binary compounds; gallium nitride quantum wells; high-quality factor microcavity; lattice-matched alloy; optical fabrication; polariton lasers; Atomic beams; Atomic measurements; Cavity resonators; Excitons; Gallium nitride; Thyristors;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348374
