Title :
Polariton lasing in a ZnO-based microcavity up to 353K
Author :
Lai, Ying-Yu ; Lan, Yu-Pin ; Huang, Si-Wei ; Lu, Tien-Chang ; Wang, Shing-Chung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report the polariton lasing at temperature up to 353K in a ZnO-based microcavity. The large exciton binding energy and Rabi-splitting of ZnO ensuring the strong coupling regime is maintained at high temperature.
Keywords :
II-VI semiconductors; binding energy; excitons; microcavity lasers; polaritons; wide band gap semiconductors; zinc compounds; Rabi-splitting; ZnO; large-exciton binding energy; microcavity lasers; polariton lasing; temperature 353 K; Distributed Bragg reflectors; Land surface temperature; Laser excitation; Microcavities; Photonics; Zinc oxide;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348375
