DocumentCode :
2136118
Title :
Simulation of Self-heating HBTs Based on Isothermal Gummel-Poon Model
Author :
Zhu, Y. ; Twynam, J.K. ; Kishimoto, K. ; Yagura, M. ; Hasegawa, M. ; Hasegawa, T. ; Sakuno, Z. ; Yamada, A. ; Suematsu, E. ; Sato, H.
Author_Institution :
Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632, Japan. Tel: 81-7436-5-2485, Fax: 81-7436-5-2487, E-mail: zhu@mic.tnr.sharp.co.jp
Volume :
2
fYear :
1997
fDate :
8-12 Sept. 1997
Firstpage :
903
Lastpage :
908
Abstract :
Based on the correlation between the electron and hole injection currents at the emitter junction, a simple dc model of self-heating HBTs has been developed by introducing three physically-based parameters into the isothermal Gummel-Poon model, which is easy to construct and implant to circuit simulators. Both the self-heating and the anbient temperature effects can be simulated accurately. The electrical and thermal parameters of HBTs can be evaluated from the extracted model parameters, and a novel method for separating the base current components has also be developed.
Keywords :
Charge carrier processes; Circuit simulation; Electron emission; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Isothermal processes; Laboratories; Semiconductor process modeling; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
Type :
conf
DOI :
10.1109/EUMA.1997.337910
Filename :
4138962
Link To Document :
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