Title :
25 Gb/s operation of oxide-confined 850-nm VCSELs with ultralow 56 fJ dissipated power per bit
Author :
Moser, P. ; Lott, J.A. ; Wolf, P. ; Larisch, G. ; Ledentsov, N.N. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys. und Zentrum fur Nanophotonik, Tech. Univ. Berlin, Berlin, Germany
Abstract :
A new record for energy-efficient oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) particularly suited for optical interconnects is presented. Error-free performance at 25 Gb/s is achieved with dissipated/total power of only 56/83 fJ/bit. We determine the influence of the oxide-aperture diameter on the energy-efficiency of high-speed VCSELs by comparing devices with different aperture diameters all operating at 25 Gb/s. We show that our present single-mode VCSELs are more energy-efficient than our multimode ones.
Keywords :
integrated optics; laser modes; laser transitions; optical interconnections; optical transmitters; surface emitting lasers; bit rate 25 Gbit/s; energy-efficient data transmission; energy-efficient oxide-confined vertical-cavity surface-emitting lasers; integrated optics; multimode lasers; optical interconnects; oxide-aperture diameter; oxide-confined high-speed VCSEL; semiconductor lasers; single-mode VCSEL; ultralow-dissipated power-per-bit; wavelength 850 nm; Adaptive optics; Apertures; Bit rate; Energy efficiency; Optical interconnections; Vertical cavity surface emitting lasers; energy-efficiency; green photonics; high-speed modulation; vertical-cavity surface-emitting laser;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348382
