DocumentCode :
2136248
Title :
Ternary comb-like silicon photonic crystal: Oxidation, intrinsic modes, reflection windows and contrastivity
Author :
Glushko, E.Ya.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
fYear :
2013
fDate :
9-13 Sept. 2013
Firstpage :
56
Lastpage :
57
Abstract :
A ternary photonic crystal - A/B/A/C periodic structure is investigated analytically and numerically in the framework of transfer matrix formalism. The influence of oxidation to photonic gaps and positions of reflection windows for (SiO2/Si/SiO2/Air)N structure is calculated. It was shown that intrinsic optical contrastivity has a non-monotone behavior during the process of oxidation of silicon. The found results will allow to determine the optimal regimes of oxidation to obtain needed photonic device properties.
Keywords :
elemental semiconductors; numerical analysis; oxidation; photonic band gap; photonic crystals; silicon; silicon compounds; (SiO2-Si-SiO2)N; A/B/A/C periodic structure; intrinsic modes; intrinsic optical contrastivity; nonmonotone behavior; numerical analysis; oxidation; photonic device properties; photonic gaps; reflection windows; ternary comb-like silicon photonic crystal; transfer matrix formalism; Optical reflection; Oxidation; Photonic band gap; Photonics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
ISSN :
2160-1518
Print_ISBN :
978-1-4799-0016-9
Type :
conf
DOI :
10.1109/CAOL.2013.6657525
Filename :
6657525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2136248
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