Title :
Electrically driven photonic crystal nanocavity laser
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We develop electrically driven photonic crystal laser employing an ultracompact active region embedded with InP photonic crystal slab. The device exhibits threshold current of 0.39 mA and the maximum 3-dB modulation bandwidth of 8.4 GHz.
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; nanophotonics; optical fabrication; optical modulation; photonic crystals; semiconductor lasers; InP; current 0.39 mA; electrically-driven photonic crystal nanocavity laser; frequency 8.4 GHz; indium phosphide photonic crystal slab; modulation bandwidth; noise figure 3 dB; optical fabrication; semiconductor lasers; ultracompact active region; Bandwidth; Indium phosphide; Modulation; Photonic crystals; Photonics; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348385
