Title :
Mode localization in defect-free GaN-based bottom-up photonic quasicrystal lasers
Author :
Wu, Tzeng-Tsong ; Chen, Chih-Cheng ; Chen, Hao-Wen ; Lu, Tien-Chang ; Wang, Shing-Chung ; Kuo, Cheng-Huang
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers.
Keywords :
III-V semiconductors; gallium compounds; nanolithography; nanophotonics; optical fabrication; photonic crystals; quasicrystals; semiconductor lasers; soft lithography; wide band gap semiconductors; GaN; PQC lasers; defect-free gallium nitride -based bottom-up photonic quasicrystal lasers; mode localization; nanoimprint technique; photonic quasicrystal nanopillars; selective area growth; Laser excitation; Laser modes; Measurement by laser beam; Photonics; Surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348389
