A multiple-valued ferroelectric content-addressable memory

Author

Sheikholeslami, Ali ; Gulak, P. Glenn ; Hanyu, Takahiro

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1996

fDate

29-31 May 1996

Firstpage

74

Lastpage

79

Abstract

A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility

Keywords

content-addressable storage; ferroelectric capacitors; ferroelectric storage; multivalued logic circuits; 2-bit search operation; 4-level polarization; area; ferroelectric capacitors; implementation feasibility; multiple-valued ferroelectric content-addressable memory; nonvolatile content-addressable memory; speed; storage elements; CADCAM; Cams; Capacitors; Computer aided manufacturing; Dielectric materials; Ferroelectric materials; Iron; Nonvolatile memory; Permittivity; Polarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Multiple-Valued Logic, 1996. Proceedings., 26th International Symposium on

Conference_Location

Santiago de Compostela

ISSN

0195-623X

Print_ISBN

0-8186-7392-3

Type

conf

DOI

10.1109/ISMVL.1996.508339

Filename

508339