Title :
A multiple-valued ferroelectric content-addressable memory
Author :
Sheikholeslami, Ali ; Gulak, P. Glenn ; Hanyu, Takahiro
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
A novel architecture for a multiple-valued ferroelectric content-addressable memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility
Keywords :
content-addressable storage; ferroelectric capacitors; ferroelectric storage; multivalued logic circuits; 2-bit search operation; 4-level polarization; area; ferroelectric capacitors; implementation feasibility; multiple-valued ferroelectric content-addressable memory; nonvolatile content-addressable memory; speed; storage elements; CADCAM; Cams; Capacitors; Computer aided manufacturing; Dielectric materials; Ferroelectric materials; Iron; Nonvolatile memory; Permittivity; Polarization;
Conference_Titel :
Multiple-Valued Logic, 1996. Proceedings., 26th International Symposium on
Conference_Location :
Santiago de Compostela
Print_ISBN :
0-8186-7392-3
DOI :
10.1109/ISMVL.1996.508339
