Title :
7.12 W/mm (up to 1.7W) CW X-band InGaP/GaAs HBTs: Top Heat Sink and Topology Influence
Author :
Floriot, D. ; Delage, S-L. ; Chartier, E. ; Blanck, H. ; Poisson, M-A
Author_Institution :
THOMSON-CSF - Central Research Laboratories, Domaine de Corbeville - 91404 Orsay Cedex - France
Abstract :
In this paper, we report a 1.7 W output power and 55% PAE at 10 GHz using thermally shunted multi-finger HBTs having a total emitter area of 2×240 ¿2. We show that the global power performances of our HBTs are not depending on the total emitter lenght, especially in term of PAE. It is demonstrated that the parallel combining topology is more suitable for power amplification than the fishbone topology (1-dB improvement on the linear power gain).
Keywords :
Gain; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; Laboratories; Power amplifiers; Power generation; Pulse amplifiers; Thermal resistance; Topology;
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
DOI :
10.1109/EUMA.1997.337931
