Title :
Subthreshold transistor operation for a high sensitivity capacitive sensor
Author :
Miled, Mohamed Amine ; Sawan, Mohamad
Author_Institution :
Dept. of Electr. Eng., Ecole Polytech. de Montreal, Montreal, QC
Abstract :
In this paper a low-power highly sensitive capacitor sensor is presented. When interfaced to interdigitated electrodes the corresponding circuit, based on capacitance variation, allows sensing microfluidic substances in lab-on-chip applications. We demonstrate the impact of the subthreshold region of transistor on the sensitivity of the capacitive sensor while it decreases the power consumption of the circuit. The proposed capacitive sensor circuit is implemented in 0.18 mum CMOS technology and the obtained sensitivity is 69 mV/fF.
Keywords :
CMOS integrated circuits; capacitive sensors; transistors; capacitance variation; capacitive sensor circuit; capacitive sensor sensitivity; capacitor sensor; microfluidic substance; size 0.18 mum; subthreshold transistor operation; CMOS technology; Capacitance; Capacitive sensors; Capacitors; Circuits; Energy consumption; Equations; Mirrors; Sensor phenomena and characterization; Voltage; Capacitive sensor; low power circuits; sensor sensitivity; subthreshold region;
Conference_Titel :
Electrical and Computer Engineering, 2008. CCECE 2008. Canadian Conference on
Conference_Location :
Niagara Falls, ON
Print_ISBN :
978-1-4244-1642-4
Electronic_ISBN :
0840-7789
DOI :
10.1109/CCECE.2008.4564827