DocumentCode :
2136710
Title :
High-performance Power PHEMT for Wireless Communications
Author :
Tkachenko, Y. ; Kapitan, L. ; Leung, L. ; Mitchell, D. ; Bartle, D.
Author_Institution :
Alpha Industries, 20 Sylvan Rd, Woburn MA, 01801, Tel (617)-935-5150, Fax (617)-8244572, e-mail: gtkachenko@alphaind.com
Volume :
2
fYear :
1997
fDate :
8-12 Sept. 1997
Firstpage :
1041
Lastpage :
1045
Abstract :
A low-cost 0.7 ¿m gate power pseudoinorplhic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passivation conditions were optimized to yield a device with high breakdown combined with minimal gate lag. A 2 mm PHEMT exhibits dc Idss. of 300 mA/mm, Imax of 500 mA/mm, peak Gm of 360 mS/mm and 3-terminal breakdown voltage of 13 V. At 0.85 GHz such a device exhibits a record output power density of 630 mW/mmn at Vds=5.8 V and 290 mW/mm at Vds=3.4 V with associated PAE of 60%.
Keywords :
Electric breakdown; Gallium arsenide; Knee; Low voltage; MESFETs; PHEMTs; Passivation; Pulse measurements; Silicon; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
Type :
conf
DOI :
10.1109/EUMA.1997.337934
Filename :
4138986
Link To Document :
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